Oxide and nitride semiconductors

processing, properties, and applications by Takafumi Yao

Publisher: Springer in Berlin

Written in English
Cover of: Oxide and nitride semiconductors | Takafumi Yao
Published: Pages: 517 Downloads: 645
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Subjects:

  • Zinkoxid,
  • Zinc oxide,
  • Metal oxide semiconductors,
  • Electric properties,
  • Galliumnitrid,
  • Verbindungshalbleiter,
  • Gallium nitride

Edition Notes

Includes bibliographical references and index.

StatementTakafumi Yao, Soon-Ku Hong, (eds.).
SeriesAdvances in materials research -- 12
Classifications
LC ClassificationsTK7871.99.M44 O95 2009
The Physical Object
Paginationxiv, 517 p. :
Number of Pages517
ID Numbers
Open LibraryOL24813852M
ISBN 109783540888468, 9783540888475
LC Control Number2008938478
OCLC/WorldCa269435375

Synopsis Groundbreaking book that combines information on power electronics and optoelectronic applications of nitride semiconductors With contributions from a panel of international experts, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices offers a state-of-the-art review of GaN-based technologies that covers the fields of both power electronics and. Home Semiconductors Zinc Oxide. Zinc Oxide. Zinc oxide has the potential to make a tremendous impact in the ultraviolet and visible LEDs markets. Manufacturing costs for making LEDs with this material promise to be far less than those associated with the incumbent, gallium nitride, and could spur widespread adoption of solid-state lighting. Nitride Semiconductors Handbook on Materials and Devices ISBN: Ng, K. K. Complete Guide to Semiconductor Devices in these books, including this book, to be free of errors. Readers are advised to keep in mind that statements, data, illustrations, procedural details or. This paper uses the results of the characterization of amorphous semiconductor thin film transistors (TFTs) with a split gate and the quasi-permanent memory structure referred to as silicon oxide Modeling of Spiking Analog Neural Circuits with Hebbian Learning, Using Amorphous Semiconductor Thin Film Transistors with Silicon Oxide Nitride.

University, Turkey, and,in , his Ph.D. degree from Duke University, where he has made many contributions to the understanding of ultrafast carrier dynamics in nitride heterostructures. Dr. Özgür has authored over 50 scientific publications and several book chapters on growth, fabrication, and characterization of wide bandgap semiconductor.   We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Blue–green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and.   The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN.4/5(1).

An oxide is a chemical compound made up of oxygen combined with at least one other of the Earth’s crust consists of oxides. Nitrides used in ceramics consist of nitrogen atoms bonded to elements such as silicon and boron. A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride. A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. An integrated heterostructure of Group III-V nitride compound semiconductors is formed on a multicomponent platform which includes a substrate of monocrystalline silicon carbide and a non-nitride buffer layer of monocrystalline zinc oxide. The zinc oxide may be formed by molecular beam epitaxy (MBE) using an MBE effusion cell containing zinc, and a source of atomic oxygen, such as an MBE.

Oxide and nitride semiconductors by Takafumi Yao Download PDF EPUB FB2

This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN.

The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN. This is a unique book devoted to the important class of both oxide and nitride semiconductors.

It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN. Materials properties, bulk growth, thin and thick films growth, control of polarity and.

This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN.

The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN. This is a unique book devoted to the important class of both oxide and nitride semiconductors.

It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN. Materials properties, bulk growth, thin. Book January Structural, elastic, and electronic properties of the group-III nitride and the group-II oxide semiconductors are introduced here with Oxide and nitride semiconductors book material parameters.

These. Oxide and Nitride Semiconductors, Advances in Materials Research. Pub Date: DOI: / Bibcode: .Y Keywords: Material Science; Optical and Electronic Materials; Solid State Physics and Spectroscopy; Applied Cited by: Handbook of Nitride Semiconductors and Devices Vol.

2: Electronic and Optical Processes in Nitrides. jpg. in these books, including this book, to be free of errors. Readers are advised to keep in mind that statements, data, illustrations, procedural details or. The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth.

They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).

Furthermore, research into nanowires of these materials has intensified due to the enhancement of piezoelectric properties at the nanoscale. In this regard, nanowires of ZnO and the III-nitrides have been extensively studied, but the piezoelectric properties of non-nitride III–V semiconductor nanowires remain less-explored.

A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors typically form in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Book Description. This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides.

Book Description. Addresses a Growing Need for High-Power and High-Frequency Transistors. Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology.

A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. A semiconductor device is protected by a passivation layer, which includes underlying and overlying silicon nitride layers deposited by the plasma-assisted CVD method by changing layer forming conditions.

The silicon nitride layers respectively have their intrinsic compressive stresses. The underlying silicon nitride layer in contact with a metal wiring layer has the intrinsic compressive.

With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of.

Get this from a library. Oxide and nitride semiconductors: processing, properties, and applications. [Takafumi Yao; Soon-Ku Hong;] -- "This is a unique book devoted to the important class of both oxide and nitride semiconductors.

It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide. Get this from a library.

Oxide and nitride semiconductors: processing, properties and applications. [Takafumi Yao; Soon-Ku Hong;] -- This is a unique book devoted to the important class of both oxide and nitride semiconductors.

It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the. Silicon nitride Pad oxide Silicon Fig.

Basic film layer stack For lateral isolation of transistors, a so-called field oxide (FOX) is deposited on the bare silicon surface. While the oxidation on the bare silicon takes place, the pad oxide causes a lateral diffusion of oxide beneath the silicon nitride.

- The first part of the book covers electronic, optical, and material parameters of nitride semiconductors that are used in device models. - The second and main part explains and investigates a broad selection of devices, including state-of-the-art light-emitting diodes, laser diodes, and transistors, as well as several novel device s: 1.

The ZnO-based oxide and GaN-based nitride semiconductors have been explored for applications to photonic devices in the UV wavelength region and high power electronic devices, where the control of crystal polarity is one of the key issues.

This paper. The better scaling perspective of semiconductor–oxide–nitride–oxide–semiconductor (SONOS) memories, together with the ease of integration in a base line CMOS process makes SONOS an excellent candidate for embedded flash in the 90 nm node and beyond.

Addresses a Growing Need for High-Power and High-Frequency Transistors. Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics.

You are currently offline. Some features of the site may not work correctly. 1. Introduction. Semiconductor–oxide–nitride–oxide–semiconductor (SONOS) is an old memory concept becoming interesting again, because the present industry standard for non-volatile memories, which is based on charge storage on a floating gate poly, reaches their scaling limits.

Semiconductor–oxide–nitride–oxide–semiconductor devices trap charge in a nitride layer. Semiconducting oxides and nitrides are becoming the most important s- jects in materials science.

In particular, zinc oxide (ZnO), gallium nitride (GaN), and related compounds form a novel class of semiconductors which possess unique properties in terms of crystallography, crystal growth, op- cal properties, electrical properties, magnetic properties, and so forth.

semiconductor (e.g. GaN with a bandgap of eV), in order to realize a large output power and small on-resistance at high operating temperature [8]. There are two specific power device structures for which based devices are becoming GaN-increasingly relevant – the metal-insulator (oxide)semiconductor - field effect transistor (MISFET or.

Magnetic semiconductors are semiconductor materials that exhibit both ferromagnetism (or a similar response) and useful semiconductor properties.

If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of charge carriers (n-or p-type), practical magnetic semiconductors would also allow control of quantum.

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Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option will search all publications for the Publisher/Society in context. GaN, and related materials,” in Oxide and Nitride Semiconductors (Springer, ).

the last five years for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiN x:H and SiN x:H(C)) and non-hydrogenated (SiN x and SiN x(C)) forms. Prior years reports will be discussed only in the context of providing ap-propriate background and support for the more contemporary results.Silicon carbide and gallium nitride are emerging as potential replacement or metal-oxide-semiconductor field-effect transistor, is a compact device that is nearly ubiquitous in modern.Riber's family of industry-leading MBE systems can deposit an incredibly wide range of compound semiconductor films, including every common material.

Arsenide / Phosphide / Antimonide Gallium Nitride.